Rapid thermal processing on n-type crystalline silicon thin film
In this paper, firstly, Why should the solid phase crystallization of hydrogenated amorphous silicon thin film thin. Then, a-Si:H films were prepared on qurtz substrates by PECVDT。he effect of rapid thermal processing on the samples were studied,Resistance of thin film samples before and after the annealing process were test by four probe method. Ellip sometry were used to test the thickness, the comparison of the resistivity of the films before and after heat treatment,By controlling the annealing temperature and time to obtain the low resistivity of thin film samples the best process。Therefore, the thesis particularly change of resistivity of the films are analyzed in detail.
According to the data, it can be found that the resistivity of thin film samples decreased heavily after heat treatment, The change of resistivity film style ratio increases with the increase of annealing temperature。The annealing time from 10s to 20s, the change of resistivity of the film sample rate。before the heat treatment is 8000 times after at 20s and 1000℃ heat treatment。As the processing temperature increases, the rate of the resistivities of the samples before and after heat treatment changes increases。