Solid phase crystallization of p-type silicon films by rapid thermal processing Abstract As a new clean energy, solar energy has got more and more attention. As a kind of solar cells, thin film stand out from all of them for it's superior performance. This thesis has done some exploratory research on high quality polycrystalline silicon thin film. The p- type amorphous silicon films were prepared by PECVD first. Then, they were annealed by rapid heat treatment. Ellipsometer and four point probe square resistance tester were used to test the thickness and resistivity of the samples before and after the annealing process. The plateau temperature and the plateau time varied in the range of 800℃-1150 ℃and 10s-20s, in order to find the optimal paremeters for the process. The results showed that the resistivities of silicon thin films after heat treatment decreases heavily than those before the heat treatment, and the thicknesses of the silicon thin film decreased obviously, also. At the same time it is also found that the plateau temperature and time of the heat treatment has great effect on crystallization of amorphous silicon thin films. Under the condition of 10 s heat treatment, and in the range of 950 ℃ to 1150 ℃, with the increase of the temperature, the resistivity will become more and more low until reached 1.226×10-4Ω•m; when under the condition of 20 s heat treatment, with the increase of temperature, the resistivity decreases firstly and then increased, at 1100 ℃ the resistivity is lowest, the value is 1.115×10-4Ω•m . Below 1150 ℃, the shorter the time of heat treatment, the lower the resistivity . Opponently, when the temperature reached 1150 ℃, the resistivity of the sample with a plateau time 10 s is less than that of the sample with a plateau time of 20 s. .