论文>材料科学论文> 快速晶化法制备P型晶硅薄膜

快速晶化法制备P型晶硅薄膜

编号:75-315705 | zip 格式 | 1.22M |
包括开题报告ㄛ任务书ㄛpptㄛ翻译原文和译文


摘要 I
Abstract II
1﹜ 引言 1
1.1太阳能电池概述 1
1.2多晶硅薄膜介绍 1
1.3多晶硅薄膜的制备方法 2
1.4本文研究内容与目的 8
2﹜ 实验方法 9
2.1 非晶硅薄膜的制备 9
2.2 快速热处理ㄗRTPㄘ晶化非晶硅 9
2.3分析与测试 10
3﹜ 结果与讨论 12
3.1 退火温度对电阻率的影响 12
3.2退火时间对电阻率的影响 14
3.3热处理对薄膜厚度的影响 15
4﹜结论 16
参考文献 17
致 谢 20


摘要
随着传统能源的枯竭ㄛ太阳能这?#20013;?#22411;清洁能源越来越受到人们的重视﹝作为太阳能电池的一种ㄛ薄膜电池以其优越的性能从?#22411;?#39062;而出﹝本文在如何制备高质量多晶硅薄膜方面做了些探索性的研究ㄛ实验通过?#21046;?#20202;ㄛ?#22902;?#38024;电阻测试仪对快速热处理ㄗRTPㄘ前后的等离子体增强化学气相沉积ㄗPECVDㄘ法在石英衬底上沉积的B元素掺杂的P型薄膜的厚度和方块电阻进行了测试分析﹝其中快速热处理的方法是ㄛ在保温温度950⊥ㄜ1150⊥ㄛ保温时间10ㄜ20s的参数范围内对样?#26041;?#34892;处理﹝通过对比在温度和时间这两个变量下热处理后的结晶化效果ㄛ得出最优热处理条件﹝
研究结果发现ㄛ硅薄膜热处理之后的电阻?#35797;对?#23567;于热处理之前的电阻率ㄛ并且它的厚度也明显减小﹝同时我们还发现ㄛ热处理温度与时间对非晶硅薄膜的晶化都有很大的影响﹝在950⊥至1150⊥的范围内热处理10s的情况下ㄛ随着温度的升高ㄛ电阻?#35797;?#20302;ㄛ最低可达1.226℅10-4次•m˙在热处理20s的情况下ㄛ随着温度的升高ㄛ电阻率先减小后增大ㄛ在1100⊥时电阻?#39318;?#23567;ㄛ其值是1.115℅10-4次•m﹝当温度相同ㄛ在1150⊥以下时ㄛ热处理时间越长ㄛ电阻?#35797;?#20302;˙温度达到1150⊥后ㄛ10s时的电阻率小于20s时的电阻率﹝
关键词: p型多晶硅薄膜˙晶化˙快速热处理˙电阻率﹝


Solid phase crystallization of p-type silicon films by rapid thermal processing
Abstract
As a new clean energy, solar energy has got more and more attention. As a kind of solar cells, thin film stand out from all of them for it's superior performance. This thesis has done some exploratory research on high quality polycrystalline silicon thin film. The p- type amorphous silicon films were prepared by PECVD first. Then, they were annealed by rapid heat treatment. Ellipsometer and four point probe square resistance tester were used to test the thickness and resistivity of the samples before and after the annealing process. The plateau temperature and the plateau time varied in the range of 800⊥-1150 ⊥and 10s-20s, in order to find the optimal paremeters for the process.
The results showed that the resistivities of silicon thin films after heat treatment decreases heavily than those before the heat treatment, and the thicknesses of the silicon thin film decreased obviously, also. At the same time it is also found that the plateau temperature and time of the heat treatment has great effect on crystallization of amorphous silicon thin films. Under the condition of 10 s heat treatment, and in the range of 950 ⊥ to 1150 ⊥, with the increase of the temperature, the resistivity will become more and more low until reached 1.226℅10-4次•m; when under the condition of 20 s heat treatment, with the increase of temperature, the resistivity decreases firstly and then increased, at 1100 ⊥ the resistivity is lowest, the value is 1.115℅10-4次•m . Below 1150 ⊥, the shorter the time of heat treatment, the lower the resistivity . Opponently, when the temperature reached 1150 ⊥, the resistivity of the sample with a plateau time 10 s is less than that of the sample with a plateau time of 20 s. .

Key words: P-type polycrystalline silicon thin film; crystallization; rapid heat treatment; resistivity.
  
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